A novel biasing scheme for I-MOS (impact-ionization MOS) devices

Author

Young Choi, Woo ; Young Song, Jae ; Duk Lee, Jong ; Park, Byung-Gook ; Byung-Gook Park

Author_Institution

Inter-Univ. Semicond. Res. Center, Seoul, South Korea

Volume

4

Issue

3

fYear

2005

fDate

5/1/2005 12:00:00 AM

Firstpage

322

Lastpage

325

Abstract

A novel biasing scheme for impact-ionization metal-oxide semiconductor (I-MOS) devices was proposed based on the physics of the device, which features negative biasing at the source region. To confirm the proposed idea, we have simulated an I-MOS whose gate length is 130 nm. According to the simulation results, by increasing the value of the reverse source-to-body bias, we can enhance the electrical characteristics of I-MOS devices. With the source bias of -6.5 V, a 130-nm I-MOS has a threshold voltage of 0.19 V, a subthreshold swing of 3 mV/dec, and a drain induced current enhancement of 20 mV/V. The proposed biasing scheme will make the I-MOS more useful and lead it to act as an ideal switch.

Keywords

MIS devices; avalanche breakdown; impact ionisation; semiconductor device breakdown; semiconductor device measurement; semiconductor process modelling; -6.5 V; 0.19 V; 130 nm; avalanche breakdown; biasing scheme; drain induced current enhancement; electrical characteristics; impact-ionization metal-oxide semiconductor devices; reverse source-to-body bias; source region; subthreshold swing; Avalanche breakdown; Breakdown voltage; Electric variables; Impact ionization; MOSFET circuits; Physics; Switches; Temperature; Threshold voltage; Voltage control; Avalanche breakdown; drain induced current enhancement (DICE); impact-ionization metal–oxide semiconductor (I-MOS); novel biasing scheme; subthreshold swing;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2005.847001

Filename

1430667