DocumentCode
806101
Title
Ultrahigh-speed direct digital synthesizer using InP DHBT technology
Author
Gutierrez-Aitken, Augusto ; Matsui, Jim ; Kaneshiro, Eric N. ; Oyama, Bert K. ; Sawdai, Donald ; Oki, Aaron K. ; Streit, Dwight C.
Author_Institution
Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA
Volume
37
Issue
9
fYear
2002
fDate
9/1/2002 12:00:00 AM
Firstpage
1115
Lastpage
1119
Abstract
Direct digital synthesizers (DDS) offer advantages such as precise beam shaping and forming over conventional RF approaches. This paper discusses novel design and process techniques that enable direct digital synthesis of S-band output frequencies using our current InP double-heterojunction bipolar transistor technology with a cantilevered base layer and undercut collector. The DDS chip operates at the world record clock rate of 9.2 GHz and capable of generating sinewaves up to 4.56 GHz. It also demonstrates state-of-the-art phase noise of -140 dBc at a frequency offset of 1 kHz and a clock frequency of 2.5 GHz. Further design and process improvements will be implemented in future generation circuits that will enable synthesis of Ku-band frequencies.
Keywords
III-V semiconductors; UHF integrated circuits; bipolar integrated circuits; direct digital synthesis; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; integrated circuit noise; mixed analogue-digital integrated circuits; phase noise; 2.5 GHz; 4.56 GHz; 9.2 GHz; InP; InP DHBT technology; S-band output frequencies; UHF bipolar transistors; UHF integrated circuits; cantilevered base layer; digital-analog conversion; direct digital synthesizer; double-heterojunction bipolar transistor; frequency synthesizers; phase noise; sinewave generation; ultrahigh-speed DDS chip; undercut collector; Bipolar transistors; Circuits; Clocks; DH-HEMTs; Frequency synthesizers; Heterojunction bipolar transistors; Indium phosphide; Phased arrays; Process design; Radio frequency;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2002.801174
Filename
1028088
Link To Document