Title :
Ultrahigh-efficiency power amplifier for space radar applications
Author :
Quach, Tony K. ; Watson, Paul M. ; Okamura, Wendy ; Kaneshiro, Eric N. ; Gutierrez-Aitken, Augusto ; Block, Thomas R. ; Eldredge, Jack W. ; Jenkins, Thomas J. ; Kehias, Lois T. ; Oki, Aaron K. ; Sawdai, Donald ; Welch, Ryan J. ; Worley, Rick D.
Author_Institution :
Air Force Res. Lab., Wright-Patterson AFB, OH, USA
fDate :
9/1/2002 12:00:00 AM
Abstract :
This paper describes a broad-band switch mode power amplifier based on the indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The amplifier combines the alternative Class-E mode of operation with a harmonic termination technique that minimizes the insertion loss of matching circuitry to obtain ultrahigh-efficiency operation at X-band. For broad-band Class-E performance, the amplifiers output network employs a transmission line topology to achieve broad-band harmonic terminations while providing the optimal fundamental impedance to shape the output current and voltage waveforms of the device for maximum efficiency performance. As a result, 65% power-added efficiency (PAE) was achieved at 10 GHz. Over the frequency band of 9-11 GHz, the power amplifier achieved 49%-65% PAE, 18-22 dBm of output power, and 8-11 dB gain at 4 V supply. The reported power amplifier achieved what is believed to be the best PAE performance at 10 GHz and the widest bandwidth for a switch-mode design at X-band.
Keywords :
III-V semiconductors; MMIC power amplifiers; bipolar MMIC; heterojunction bipolar transistors; indium compounds; radar equipment; spaceborne radar; switching circuits; wideband amplifiers; 4 V; 49 to 65 percent; 8 to 11 dB; 9 to 11 GHz; InP DHBT technology; X-band; broad-band harmonic terminations; broadband class-E performance; broadband switch mode amplifier; class-E mode operation; double heterojunction bipolar transistor technology; harmonic termination technique; matching circuitry; optimal fundamental impedance; space radar applications; switch-mode design; transmission line topology; ultrahigh-efficiency power amplifier; DH-HEMTs; Double heterojunction bipolar transistors; Indium phosphide; Insertion loss; Operational amplifiers; Power amplifiers; Radar applications; Space technology; Switches; Termination of employment;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2002.801193
