• DocumentCode
    806149
  • Title

    Low-power 1:16 DEMUX and one-chip CDR with 1:4 DEMUX using InP-InGaAs heterojunction bipolar transistors

  • Author

    Ishii, Kiyoshi ; Nosaka, Hideyuki ; Nakajima, Hiroki ; Kurishima, Kenji ; Ida, Minoru ; Watanabe, Noriyuki ; Yamane, Yasurou ; Sano, Eiichi ; Enoki, Takatomo

  • Author_Institution
    NTT Photonics Labs., Kanagawa, Japan
  • Volume
    37
  • Issue
    9
  • fYear
    2002
  • fDate
    9/1/2002 12:00:00 AM
  • Firstpage
    1146
  • Lastpage
    1151
  • Abstract
    Using InP-InGaAs heterojunction bipolar transistor (HBT) technology, we have successfully designed and fabricated a low-power 1:16 demultiplexer (DEMUX) integrated circuit (IC) and one-chip clock and data recovery (CDR) with a 1:4 DEMUX IC for 10-Gb/s optical communications systems. The InP-InGaAs HBTs were fabricated by a nonself-aligned process for high uniformity of device characteristics and producibility. The 1:16 DEMUX IC and the one-chip CDR with the 1:4 DEMUX IC consist of approximately 1200 and 460 transistors, respectively. We have confirmed error-free operation at 10 Gb/s for all data outputs of both ICs. The 1:16 DEMUX IC and the one-chip CDR with the 1:4 DEMUX IC consume only 1 W and 950 mW, respectively. These results demonstrate the feasibility of InP-InGaAs HBTs for low power high-integration optical communication ICs.
  • Keywords
    III-V semiconductors; bipolar digital integrated circuits; bipolar integrated circuits; demultiplexing equipment; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; low-power electronics; mixed analogue-digital integrated circuits; optical communication equipment; synchronisation; timing; 1 W; 10 Gbit/s; 950 mW; InP-InGaAs; InP-InGaAs HBT technology; error-free operation; heterojunction bipolar transistor technology; low-power demultiplexer IC; low-power optical communication ICs; nonself-aligned process; one-chip clock/data recovery/demultiplexer IC; Bipolar integrated circuits; Clocks; Fabrication; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit technology; Laboratories; Optical fiber communication; Photonic integrated circuits; Wavelength division multiplexing;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2002.801190
  • Filename
    1028092