Title :
InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers
Author :
Baeyens, Yves ; Georgiou, George ; Weiner, Joseph S. ; Leven, Andreas ; Houtsma, Vincent ; Paschke, Peter ; Lee, Q. ; Kopf, Rose F. ; Yang, Yang ; Chua, L. ; Chen, Young-Kai ; Liu, C.T. ; Young-Kai Chen
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
fDate :
9/1/2002 12:00:00 AM
Abstract :
The combination of device speed (fT, fmax > 150 GHz) and breakdown voltage (Vbceo > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-μm-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-Vpp differential output swing, a distributed 40-Gb/s driver amplifier with 6-Vpp differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product.
Keywords :
III-V semiconductors; bipolar MIMIC; bipolar analogue integrated circuits; distributed amplifiers; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; integrated circuit noise; millimetre wave amplifiers; millimetre wave oscillators; optical communication equipment; phase noise; transceivers; voltage-controlled oscillators; wideband amplifiers; 1.2 micron; 1.6 micron; 146 GHz; 40 GHz; 40 Gbit/s; DHBT technology; InP; InP D-HBT ICs; analog circuits; distributed driver amplifier; distributed preamplifiers; double heterojunction bipolar transistor; high bitrate lightwave transceivers; high-speed ICs; low phase noise VCO; low-jitter limiting amplifier; lumped limiting driver amplifier; optical receivers; optical transmitters; push-push voltage-controlled oscillator; Analog circuits; Bit rate; Differential amplifiers; Distributed amplifiers; Double heterojunction bipolar transistors; Driver circuits; Fingers; Indium phosphide; Low-noise amplifiers; Transceivers;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2002.801188
