• DocumentCode
    806247
  • Title

    Equivalent circuit modeling of static substrate thermal coupling using VCVS representation

  • Author

    Walkey, David J. ; Smy, Tom J. ; Dickson, Ross G. ; Brodsky, Jonathan S. ; Zweidinger, David T. ; Fox, Robert M.

  • Author_Institution
    Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
  • Volume
    37
  • Issue
    9
  • fYear
    2002
  • fDate
    9/1/2002 12:00:00 AM
  • Firstpage
    1198
  • Lastpage
    1206
  • Abstract
    A new method is described which allows substrate thermal coupling between active devices to be accurately represented in a circuit simulation environment. The method, based on a substrate thermal equivalent circuit containing resistors and voltage-controlled voltage sources, allows for exact representation of substrate thermal coupling at any number of evaluation points. The topology of the equivalent circuit and derivation of its coefficients is described, and application of the technique to inter- and intradevice thermal effects is illustrated. The method is applied with a simple self-heating compact model representation to a measured GaAs device characteristic exhibiting gain collapse, and is found to accurately predict electrothermal behavior.
  • Keywords
    III-V semiconductors; active networks; circuit simulation; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; temperature distribution; thermal resistance; thermal stability; GaAs; GaAs heterojunction bipolar transistor; HBT; VCVS representation; circuit simulation environment; current collapse; electrothermal simulation; equivalent circuit modeling; equivalent circuit topology; gain collapse; interdevice thermal effects; intradevice thermal effects; resistors; self-heating compact model representation; static substrate thermal coupling; substrate thermal equivalent circuit; thermal instability; voltage-controlled voltage sources; Circuit simulation; Circuit topology; Coupling circuits; Equivalent circuits; Gain measurement; Gallium arsenide; Predictive models; Resistors; Thermal resistance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2002.801200
  • Filename
    1028099