Influence of Selected Chemical Impurities on the Trapping Parameters of Ge(Li) Counters

Specially grown P-type Ge crystals containing controlled quantities of various deep-level impurities have been studied. Measurements of the dependence of the recombination lifetimes on temperature in the P-type samples were used to determine the level position and the capture cross-section of the impurities. The trap parameters in N-I-P diodes were determined using a collimated beam of ¿-rays. Results are given for the following impurities: Ag, Cu, Zn, Cd, Cr, Te, Fe, Co and Pt. These impurities were examined in crystals with and without dislocations.