DocumentCode
806656
Title
Infrared Response Measurements on Radiation-Damaged Si(Li) Detectors
Author
Sher, A.H. ; Liu, Y.M. ; Keery, W.J.
Author_Institution
Institute for Applied Technology National Bureau of Standards Washington, D. C. 20234
Volume
19
Issue
3
fYear
1972
fDate
6/1/1972 12:00:00 AM
Firstpage
312
Lastpage
317
Abstract
The improved infrared response (IRR) technique has been used to qualitatively compare radiation effects on Si(Li) detectors with energy levels reported for silicon in the literature. Measurements have been made on five commercial silicon detectors and one fabricated in-house, both before and after irradiation with fast neutrons, l.9-MeV protons, and 1.6-MeV electrons. Effects dependent upon the extent of radiation damage have been observed. It seems likely that the photo-EMF, or photovoltage, effect is the basic mechanism for the observation of IRR in p-i-n diodes with a wide i-region. Experimental characteristics of the IRR measurement are in agreement with those of the photovoltage effect.
Keywords
Electrons; Energy states; Germanium; Infrared detectors; P-i-n diodes; Radiation detectors; Radiation effects; Semiconductor diodes; Semiconductor impurities; Silicon;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1972.4326743
Filename
4326743
Link To Document