• DocumentCode
    806725
  • Title

    Ion Implanted Contacts on Cadmium Telluride Detectors

  • Author

    Cornet, A. ; Hage-Ali, M. ; Grob, J.J. ; Stuck, R. ; Siffert, P.

  • Author_Institution
    Laboratoire de Physique des Rayonnements et d´´Electronique Nucléaire Centre de Recherches Nucléaires, Strasbourg, France
  • Volume
    19
  • Issue
    3
  • fYear
    1972
  • fDate
    6/1/1972 12:00:00 AM
  • Firstpage
    358
  • Lastpage
    361
  • Abstract
    Cadmium telluride single crystals have been grown by the vertical zone melting technique. Without added chemical impurities, they are generally N-type of 10-100 ¿. cm resistivity. Detectors have been prepared with this material by implanting Bi+ ions. The influence of the implant conditions and annealing treatments were studied. A FWHM of 24 keV has been obtained at 300° and 77° K for 5.5 MeV ¿-particles.
  • Keywords
    Cadmium compounds; Conductivity; Crystalline materials; Crystals; Detectors; Implants; Impurities; Ion implantation; Lattices; X-rays;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1972.4326750
  • Filename
    4326750
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=806725