Title :
100 W 671 nm visible laser diode array
Author :
Serreze, H.B. ; Harding, C.M.
Author_Institution :
McDonnell Douglas Electron. Syst. Co., Elmsford, NY, USA
Abstract :
A GaInP/AlGaInP, strained-layer, single quantum well, monolithic laser diode array is described which has achieved a room temperature quasi-CW (100 mu s, 10 Hz) output of over 100 W at 671 nm.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor laser arrays; 100 W; 671 nm; GaInP-AlGaInP; quasi CW output power; strained layer single quantum well monolithic laser diode array; visible laser diode array;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921357
