• DocumentCode
    806925
  • Title

    Novel microwave reflectometer for accurate characterisation of high-speed photodiode optoelectronic response

  • Author

    Humphreys, David A.

  • Author_Institution
    NPL, Teddington, UK
  • Volume
    28
  • Issue
    23
  • fYear
    1992
  • Firstpage
    2138
  • Lastpage
    2140
  • Abstract
    A reflectometer technique which corrects source-mismatch errors using scalar optoelectronic measurements alone is demonstrated. Results corrected using voltage-reflection-coefficient (VRC) measurements of both the photodiode and measurement system are compared with those determined by the new technique for a GaInAs photodiode measured to 40 GHz by a 1.5 mu m DFB laser heterodyne system. The optoelectronic response determined by the new technique falls within the scatter of the VRC corrected measurements.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; microwave reflectometry; photodiodes; semiconductor device testing; 0.045 to 40 GHz; DFB laser heterodyne system; GaInAs photodiode; high-speed photodiode optoelectronic response; microwave reflectometer; scalar optoelectronic measurements; source mismatch error correction; voltage-reflection-coefficient;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921372
  • Filename
    173001