DocumentCode
806925
Title
Novel microwave reflectometer for accurate characterisation of high-speed photodiode optoelectronic response
Author
Humphreys, David A.
Author_Institution
NPL, Teddington, UK
Volume
28
Issue
23
fYear
1992
Firstpage
2138
Lastpage
2140
Abstract
A reflectometer technique which corrects source-mismatch errors using scalar optoelectronic measurements alone is demonstrated. Results corrected using voltage-reflection-coefficient (VRC) measurements of both the photodiode and measurement system are compared with those determined by the new technique for a GaInAs photodiode measured to 40 GHz by a 1.5 mu m DFB laser heterodyne system. The optoelectronic response determined by the new technique falls within the scatter of the VRC corrected measurements.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; microwave reflectometry; photodiodes; semiconductor device testing; 0.045 to 40 GHz; DFB laser heterodyne system; GaInAs photodiode; high-speed photodiode optoelectronic response; microwave reflectometer; scalar optoelectronic measurements; source mismatch error correction; voltage-reflection-coefficient;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19921372
Filename
173001
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