Title :
25 GHz bandwidth 1.55 mu m GaInAsP p-doped strained multiquantum-well lasers
Author :
Morton, Paul A. ; Logan, R.A. ; Tanbun-Ek, T. ; Sciortino, P.F. ; Sergent, A.M. ; Montgomery, R.K. ; Lee, B.T.
Author_Institution :
AT&T Bell Labs., Murray HIll, NJ, USA
Abstract :
A modulation bandwidth of 25 GHz for InP based lasers, using devices with p-doped, strained multiquantum-well active-regions is reported. The doping reduces the bandwidth limitations caused by hole transport in standard quantum-well lasers, as well as increasing resonance frequencies to over 30 GHz. The present 25 GHz bandwidth is limited by device parasitics, with a predicted intrinsic device bandwidth of over 40 GHz.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical modulation; semiconductor lasers; 1.55 micron; 25 GHz; 30 GHz; GaInAs-InP; modulation bandwidth; multiquantum-well lasers; p-doped active region; resonance frequencies; semiconductor lasers; strained MQW;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921384
