Title :
New complex-coupled DFB-laser with a contacted surface grating for λ=1.55 μm
Author :
Rast, A. ; Johannes, T.W. ; Harth, W. ; Franz, G.
Author_Institution :
Lehrstuhl fur Allgemeine Elektrotechnik und Angewandte Elektronik, Tech. Univ. Munchen, Germany
fDate :
6/1/1995 12:00:00 AM
Abstract :
A novel complex-coupled InGaAsP/InP integrated twin guide distributed feedback (ITG-DFB) laser with a substantially simplified fabrication process made by single step epitaxy without corrugation overgrowth is described. Room temperature CW operation with a threshold current of 45 mA and a SMSR in excess of 40 dB is demonstrated
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; epitaxial growth; gallium arsenide; gallium compounds; indium compounds; optical fabrication; semiconductor growth; semiconductor lasers; 1.55 mum; 45 mA; InGaAsP-InP; InGaAsP/InP ITG-DFB-laser; complex-coupled DFB-laser; contacted surface grating; distributed feedback laser; fabrication process; integrated twin guide; room temperature CW operation; single step epitaxy; threshold current;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19951940
