Title :
12.5 Gbit/s silicon bipolar 1:4-demultiplexer IC
Author :
Albers, J.N. ; Langmann, U. ; Lao, Z.-H.
Author_Institution :
Ruhr Univ., Bochum, Germany
Abstract :
A silicon bipolar 1:4-demultiplexer IC is presented which can be operated up to approximately 12.5 Gbit/s. The channels are aligned to the outputs by two external control signals. The 370 transistor chip was fabricated with an 0.4 mu m emitter double polysilicon 21 GHz fT Si bipolar process and consumes approximately 1.9 W.
Keywords :
bipolar integrated circuits; demultiplexing equipment; digital communication systems; digital integrated circuits; elemental semiconductors; optical communication equipment; silicon; 0.4 micron; 1.9 W; 12.5 Gbit/s; 21 GHz; Si bipolar process; bipolar IC; digital optical links; double polysilicon;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921387
