• DocumentCode
    807076
  • Title

    12.5 Gbit/s silicon bipolar 1:4-demultiplexer IC

  • Author

    Albers, J.N. ; Langmann, U. ; Lao, Z.-H.

  • Author_Institution
    Ruhr Univ., Bochum, Germany
  • Volume
    28
  • Issue
    23
  • fYear
    1992
  • Firstpage
    2160
  • Lastpage
    2162
  • Abstract
    A silicon bipolar 1:4-demultiplexer IC is presented which can be operated up to approximately 12.5 Gbit/s. The channels are aligned to the outputs by two external control signals. The 370 transistor chip was fabricated with an 0.4 mu m emitter double polysilicon 21 GHz fT Si bipolar process and consumes approximately 1.9 W.
  • Keywords
    bipolar integrated circuits; demultiplexing equipment; digital communication systems; digital integrated circuits; elemental semiconductors; optical communication equipment; silicon; 0.4 micron; 1.9 W; 12.5 Gbit/s; 21 GHz; Si bipolar process; bipolar IC; digital optical links; double polysilicon;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921387
  • Filename
    173016