Title :
0.98 mu m strained-layer GaInAs/GaInAsP/GaInP quantum well lasers
Author :
Zhang, Ge ; Nappi, J. ; Ovtchinnikov, A. ; Savolainen, Pekka ; Asonen, H.
Author_Institution :
Tampere Univ. of Technol., Finland
Abstract :
Strained-layer GaInAs/GaInAsP/GaInP separate-confinement-heterostructure multiquantum well lasers which emit at a wavelength of 0.98 mu m are reported. These lasers exhibit a low threshold current density of 153 A/cm2 and high characteristic temperature up to 235 K. The internal waveguide loss and internal quantum efficiency are 5.0 cm-1 and 83%, respectively. Singlemode continuous wave operation is found up to an output power of 80 mW at room temperature for an HR/AR coated 5.5*800 mu m2 ridge waveguide laser.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; optical waveguides; semiconductor lasers; 0.98 micron; 80 mW; 83 percent; GaInAs-GaInAsP-GaInP; HR/AR coated; MQW lasers; internal quantum efficiency; quantum well lasers; ridge waveguide laser; semiconductor lasers; separate-confinement-heterostructure; single mode CW operation; strained-layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921393
