Title :
GaAs single-drift flat-profile IMPATT diodes for CW operation at D band
Author :
Eisele, H. ; Haddad, G.I.
Author_Institution :
Michigan Univ., Ann Arbor, MI, USA
Abstract :
Single-drift flat-profile GaAs IMPATT diodes were designed for CW operation in the 140 GHz range. The diodes were fabricated from MBE grown material, mounted on diamond heatsinks and tested in a radial line full height waveguide cavity. An RF output power of 15 mW with a corresponding DC to RF conversion efficiency of 1.5% was obtained at 135.3 GHz.
Keywords :
III-V semiconductors; IMPATT diodes; gallium arsenide; 1.5 percent; 135.3 to 140 GHz; 15 mW; CW operation; D band; DC to RF conversion efficiency; EHF; GaAs; IMPATT diodes; MBE grown material; MM-wave type; diamond heatsinks; microwave device; millimetre-wave; single-drift flat-profile;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921396
