Title :
InAs-InAlGaAs quantum dot DFB lasers based on InP [001]
Author :
Jin Soo Kim ; Jin Hong Lee ; Sung Ui Hong ; Ho-Sang Kwack ; Byung Seok Choi ; Dae Kon Oh
Author_Institution :
IT Convergence & Components Lab., Electron. & Telecommun. Res. Inst., Daejeon
Abstract :
The InAs-InAlGaAs quantum dot (QD) lasers with the InAlGaAs-InAlAs material system were fabricated on distributed feedback (DFB) grating structures on InP (001). The single-mode operation of InAs-InAlGaAs QD DFB lasers in continuous-wave mode was successfully achieved at the emission wavelength of 1.564 mum at room temperature. This is the first observation on the InP-based QD lasers operating around the emission wavelength window of 1.55 mum. The threshold current density of the InAs-InAlGaAs QD DFB laser with a cavity length of 1 mm and a ridge width of 3 mum, in which one of the cleaved facets was coated with 95% high-reflection, was 1.23 kA/cm2 (176 A/cm2 for single QD layer). The sidemode suppression ratio value of the QD DFB laser was as high as 42 dB at the driving current of 100 mA
Keywords :
III-V semiconductors; aluminium compounds; current density; distributed feedback lasers; gallium arsenide; indium compounds; laser cavity resonators; laser modes; optical fabrication; quantum dot lasers; semiconductor growth; 1 mm; 1.564 mum; 100 mA; 3 mum; InAs-InAlGaAs; InAs-InAlGaAs quantum dot DFB lasers; InP; cavity length; continuous-wave mode; distributed feedback grating; sidemode suppression ratio; single-mode operation; threshold current density; Distributed feedback devices; Indium phosphide; Laser feedback; Laser modes; Molecular beam epitaxial growth; Quantum dot lasers; Substrates; Temperature; Threshold current; US Department of Transportation; Continuous-wave (CW) operation; InAs; InP(001); distributed feedback (DFB); laser; quantum dot (QD);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.870187
