Title :
High-power 1320-nm wafer-bonded VCSELs with tunnel junctions
Author :
Jayaraman, V. ; Mehta, M. ; Jackson, A.W. ; Wu, S. ; Okuno, Y. ; Piprek, J. ; Bowers, J.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
A new long-wavelength vertical-cavity surface-emitting laser structure is described that utilizes AlGaAs-GaAs mirrors bonded to AlInGaAs-InP quantum wells with an intracavity buried tunnel junction. This structure offers complete wavelength flexibility in the 1250-1650 nm fiber communication bands and reduces the high free-carrier losses and bonded junction voltage drops in previous devices. The intracavity contacts electrically bypass the bonded junctions to reduce threshold voltage. N-type current spreading layers and undoped AlGaAs mirrors minimize optical losses. This has enabled 134/spl deg/C maximum continuous-wave lasing temperature, 2-mW room-temperature continuous-wave single-mode power, and 1-mW single-mode power at 80/spl deg/C, in various devices in the 1310-1340 nm wavelength range.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser mirrors; optical losses; quantum well lasers; surface emitting lasers; wafer bonding; 1 mW; 1250 to 1650 nm; 1310 to 1340 nm; 2 mW; 25 to 134 C; AlGaAs-GaAs; AlGaAs-GaAs mirrors; AlInGaAs-InP; AlInGaAs-InP quantum wells; N-type current spreading layers; bonded junction voltage drops; continuous-wave single-mode power; fiber communication bands; free-carrier losses; high-power 1320-nm wafer-bonded VCSELs; intracavity buried tunnel junction; long-wavelength vertical-cavity surface-emitting laser structure; maximum continuous-wave lasing temperature; optical losses; threshold voltage; tunnel junctions; undoped AlGaAs mirrors; wafer bonding; wavelength flexibility; Fiber lasers; Mirrors; Optical fiber communication; Optical fiber devices; Optical fiber losses; Optical surface waves; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; Wafer bonding;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.818652
