DocumentCode
807395
Title
Aging Effects on Electrical and Radiation Characteristics of Discrete Semiconductors
Author
Apodaca, L. ; Hughes, G.E.
Author_Institution
Autonetics Division of North American Rockwell Anaheim, California
Volume
19
Issue
6
fYear
1972
Firstpage
135
Lastpage
140
Abstract
The effects of operating life on the electrical and radiation effects characteristics of several high reliability discrete semiconductor device types were investigated. Approximately 2400 parts consisting of five transistor types, two regular diode types and a zener diode type with operating ages ranging from 1.6 to 5.9 years were tested in this investigation. The devices tested included representative samples of both silicon and germanium materials as well as alloy junction, mesa and planar fabrication technology. No correlation was found between operating life and the direction or magnitude of changes in either the electrical or radiation characteristics of the sample populations investigated.
Keywords
Aging; Germanium alloys; Germanium silicon alloys; Materials testing; Radiation effects; Semiconductor device reliability; Semiconductor devices; Semiconductor diodes; Semiconductor materials; Silicon germanium;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1972.4326822
Filename
4326822
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