• DocumentCode
    807395
  • Title

    Aging Effects on Electrical and Radiation Characteristics of Discrete Semiconductors

  • Author

    Apodaca, L. ; Hughes, G.E.

  • Author_Institution
    Autonetics Division of North American Rockwell Anaheim, California
  • Volume
    19
  • Issue
    6
  • fYear
    1972
  • Firstpage
    135
  • Lastpage
    140
  • Abstract
    The effects of operating life on the electrical and radiation effects characteristics of several high reliability discrete semiconductor device types were investigated. Approximately 2400 parts consisting of five transistor types, two regular diode types and a zener diode type with operating ages ranging from 1.6 to 5.9 years were tested in this investigation. The devices tested included representative samples of both silicon and germanium materials as well as alloy junction, mesa and planar fabrication technology. No correlation was found between operating life and the direction or magnitude of changes in either the electrical or radiation characteristics of the sample populations investigated.
  • Keywords
    Aging; Germanium alloys; Germanium silicon alloys; Materials testing; Radiation effects; Semiconductor device reliability; Semiconductor devices; Semiconductor diodes; Semiconductor materials; Silicon germanium;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1972.4326822
  • Filename
    4326822