Title :
Monolithically integrated 4*4 InGaAsP/InP laser amplifier gate switch arrays
Author :
Gustavsson, M. ; Lagerstrom, B. ; Thylen, Lars ; Janson, M. ; Lundgren, L. ; Rask, M. ; Stoltz, B.
Author_Institution :
Ericsson Telecom AB, Stockholm, Sweden
Abstract :
Monolithically integrated 4*4 semiconductor laser amplifier gate switch arrays comprising 24 integrated laser amplifiers have been fabricated and evaluated. Net positive optical gain between fibres, high extinction ratio, and low crosstalk are reported.
Keywords :
III-V semiconductors; crosstalk; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical communication equipment; optical switches; semiconductor laser arrays; semiconductor switches; InGaAsP-InP laser amplifier gate switch arrays; extinction ratio; fibre to fibre switch characteristics; low crosstalk; monolithic integration; positive optical gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921428
