DocumentCode
807493
Title
Monolithically integrated 4*4 InGaAsP/InP laser amplifier gate switch arrays
Author
Gustavsson, M. ; Lagerstrom, B. ; Thylen, Lars ; Janson, M. ; Lundgren, L. ; Rask, M. ; Stoltz, B.
Author_Institution
Ericsson Telecom AB, Stockholm, Sweden
Volume
28
Issue
24
fYear
1992
Firstpage
2223
Lastpage
2225
Abstract
Monolithically integrated 4*4 semiconductor laser amplifier gate switch arrays comprising 24 integrated laser amplifiers have been fabricated and evaluated. Net positive optical gain between fibres, high extinction ratio, and low crosstalk are reported.
Keywords
III-V semiconductors; crosstalk; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical communication equipment; optical switches; semiconductor laser arrays; semiconductor switches; InGaAsP-InP laser amplifier gate switch arrays; extinction ratio; fibre to fibre switch characteristics; low crosstalk; monolithic integration; positive optical gain;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19921428
Filename
173057
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