Title :
Spatial control of quantum well intermixing in GaAs/AlGaAs using a one-step process
Author :
Beavuvis, J. ; Marsh, John H.
Abstract :
Dielectric cap disordering with strontium fluoride masking is used to provide a range of bandgap values in GaAs/AlGaAs quantum wells using a single annealing step. Partial area coverage by a strontium fluoride mask under a silica cap determines the amount of quantum well intermixing.
Keywords :
III-V semiconductors; aluminium compounds; annealing; chemical interdiffusion; energy gap; gallium arsenide; semiconductor quantum wells; annealing; bandgap values; dieletric cap disordering; intermixing spatial control; one-step process; quantum well intermixing; silica cap;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921440
