DocumentCode :
807646
Title :
Determining the Energy Distribution of Pulse-Radiation-Induced Charge in MOS Structures from Rapid Annealing Measurements
Author :
Simons, M. ; Hughes, H.L.
Author_Institution :
Research Triangle Institute Research Triangle Park, N. C.
Volume :
19
Issue :
6
fYear :
1972
Firstpage :
282
Lastpage :
290
Abstract :
Activation energy distributions for the positive space charge induced in MOS structures by pulsed ionizing radiation have been calculated from shortterm, isothermal annealing data. These distributions are compared for conventional thermal oxides and oxides implanted with aluminum or sodium ions.
Keywords :
Aluminum; Annealing; Capacitance-voltage characteristics; Charge measurement; Current measurement; Energy measurement; Ion beams; Laboratories; Measurement techniques; Pulse measurements;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1972.4326846
Filename :
4326846
Link To Document :
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