DocumentCode :
807690
Title :
Small area InGaP emitter/carbon doped GaAs base HBTs grown by MOMBE
Author :
Ren, Fengyuan ; Abernathy, C.R. ; Pearton, S.J. ; Lothian, J.R. ; Chu, S.N.G. ; Wisk, Patrick W. ; Fullowan, T.R. ; Tseng, B. ; Chen, Y.K.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Volume :
28
Issue :
24
fYear :
1992
Firstpage :
2250
Lastpage :
2252
Abstract :
High performance selfaligned InGaP/GaAs HBTs are reported. SIMS and TEM analysis indicate the presence of clean and abrupt InGaP/GaAs interfaces which are reflected in excellent DC performance. Using a base layer with a sheet resistance of 135 Omega / Square Operator , a DC current gain of 25 was obtained for 2*5 mu m2 devices. Both cutoff frequency ft and maximum frequency of oscillation fmax are measured above 70 GHz. These are the highest values yet reported for HBTs containing InGaP.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor growth; 70 GHz; C doped base; DC performance; InGaP-GaAs:C; MOMBE; SIMS; TEM analysis; selfaligned HBT; small area device;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19921447
Filename :
173076
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=807690
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