Design and performance of an optoelectronic matrix switch using Si-p-i-n photodiodes

Author

Aida, Kyoko ; Matsuno, Kimio ; Toyoshima, Motoyoshi

Author_Institution

Transmission Syst. Labs., NTT, Kanagawa, Japan

Volume

6

Issue

1

fYear

1988

fDate

1/1/1988 12:00:00 AM

Firstpage

131

Lastpage

138

Abstract

Switching speed, isolation, optical-source requirements, and attainable matrix dimensions of an optoelectronic matrix switch using Si p-i-n photodiodes are discussed. By charging the internal capacitance of the diode with a photocurrent, forward bias voltages are attained that establish off-states. The novel features of the matrix switch are that the switch elements have high output impedance at off-states, and no electrical power is required to establish the off-states. This leads to advantages in fabricating large-dimension matrix switches

Keywords

integrated optoelectronics; photodiodes; silicon; switches; Si photodiodes; attainable matrix dimensions; electrical power; forward bias voltages; internal capacitance; isolation; matrix switch fabrication; off-states; optical-source requirements; optoelectronic matrix switch; p-i-n photodiodes; photocurrent; switching speed; Capacitance; Impedance; Optical noise; Optical receivers; Optical sensors; Optical switches; Photoconductivity; Photodiodes; Switching circuits; Voltage;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.3977

Filename

3977