Title :
Far field broadening due to near field phase distortion at contact layers in AlGaAs/GaAs GRIN-MQW lasers
Author :
van der Poel, C.J. ; Ambrosius, Huub ; Acket, G.A. ; Kaufmann, L.M.F. ; van de Roer, Th.G.
Abstract :
Experimentally and numerically it is shown that near field phase distortion due to optical losses in the contact regions causes a strong dependence of far field widths on cladding layer thickness for typical MQW lasers.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; optical losses; semiconductor lasers; spectral line breadth; AlGaAs-GaAs; GRIN-MQW lasers; cladding layer thickness; contact layers; near field phase distortion; optical losses; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921450
