Title :
Current Crowding in Hardened Power Transistors
Author :
Clark, L.E. ; George, W.L.
Author_Institution :
Motorola Semiconductor Products Division Phoenix, Arizona
Keywords :
Conductivity; Degradation; Impurities; Microwave transistors; Neutrons; Power transistors; Proximity effect; Resistors; Threshold current; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1972.4326856
