A highly efficient CMOS line driver with 80-dB linearity for ISDN U-interface applications

Author

Kohorramabadi, H. ; Anidjar, Joseph ; Peterson, Thomas R.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

27

Issue

12

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

1723

Lastpage

1729

Abstract

A fully differential CMOS line driver intended for ISDN U-interface applications is reported. Design details with emphasis on a novel high-swing output stage are presented. The output stage incorporates a class-B stage in parallel with the conventional class-H/B structure, allowing high linearity, high power efficiency, and well-controlled quiescent current. The prototype line driver exhibits total harmonic distortion of -83 dB for an output voltage swing of 7 V _pp-diff. It maintains linearity on the order of 78 dB for nearly rail-to-rail output voltage swing of 9 V_pp-diff for signal frequencies of up to 40 kHz. The chip, built in a 0.9-μm technology, occupies an active area of 0.63 mm². It operates from a single 5-V power supply and dissipates 20-mW quiescent power

Keywords

CMOS integrated circuits; ISDN; amplifiers; driver circuits; linear integrated circuits; transceivers; 0.8 micron; 20 mW; 40 kHz; 5 V; CMOS line driver; ISDN U-interface applications; class-B stage; class-H/B structure; fully differential; high power efficiency; high-swing output stage; output stage; CMOS technology; Driver circuits; ISDN; Linearity; Power dissipation; Power supplies; Prototypes; Radiofrequency amplifiers; Transceivers; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.173098

Filename

173098