DocumentCode :
80795
Title :
3-D Solar Cells Based on Radial Silicon Heterojunctions Exploiting Microhole Lattices
Author :
Weiying Ou ; Lei Zhao ; Surdo, S. ; Hongwei Diao ; Hailing Li ; Chunlan Zhou ; Wenjing Wang ; Barillaro, G.
Author_Institution :
Key Lab. of Solar Thermal Energy & Photovoltaic Syst., Inst. of Electr. Eng., Beijing, China
Volume :
25
Issue :
19
fYear :
2013
fDate :
Oct.1, 2013
Firstpage :
1908
Lastpage :
1911
Abstract :
In this letter, 3-D solar cells based on radial amorphous/crystalline silicon heterojunctions (SHJs), which are formed on 2-D lattices of vertical high aspect-ratio microholes (MHs) etched in crystalline silicon (c-Si) substrates, are realized with conversion efficiency of ~ 3%. Silicon high aspect-ratio MH lattices, with hole diameter of a few micrometers and hole depth of tens micrometers, are produced on n-type c-Si substrates by electrochemical micromachining (ECM) technology with low reflectance ( depending on diameter and depth) in the wavelength range between 400 and 900 nm, which is commonly exploited for solar cell application. The radial SHJ solar cells are obtained by successive quasi-conformal deposition of hydrogenated amorphous silicon (a-Si:H) i-layer and p-layer, respectively, via plasma-enhanced chemical vapor deposition at 200°C, within the MH lattices, and subsequent indium tin oxide and Ag deposition for the formation of electrical front and back contacts, respectively. Experimental conversion efficiencies up to 2.72% are obtained under standard AM1.5 illumination with intensity of 100 mW/cm2, thus envisaging that ECM technology can be successfully adopted to realize efficient 3-D solar cells based on radial p-n junctions exploiting high aspect-ratio MH lattices, in particular, or other microstructures, in general.
Keywords :
amorphous semiconductors; electrochemical machining; elemental semiconductors; etching; indium compounds; micromachining; p-n junctions; plasma CVD; semiconductor heterojunctions; silicon; silver; solar cells; 2D lattices; 3D solar cells; Ag; ECM; conversion efficiency; crystalline silicon; electrochemical micromachining; etching; hydrogenated amorphous silicon layer; plasma-enhanced chemical vapor deposition; radial p-n junctions; successive quasiconformal deposition; temperature 200 degC; vertical high aspect ratio microholes; wavelength 400 nm to 9000 nm; Etching; Lattices; P-n junctions; Photovoltaic cells; Reflectivity; Silicon; Solar cells; amorphous/crystalline silicon heterojunctions; electrochemical micromachining; radial p-n junctions; silicon microhole lattices;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2013.2277797
Filename :
6578142
Link To Document :
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