Title :
Continuous wave operation of 640-660 nm selectively oxidised AlGaInP vertical-cavity lasers
Author :
Choquette, K.D. ; Schneider, R.P. ; Crawford, M. Hagerott ; Geib, K.M. ; Figiel, J.J.
Author_Institution :
Photonics Res. Dept., Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
7/6/1995 12:00:00 AM
Abstract :
The performance of AlGaInP visible vertical-cavity laser diodes fabricated using selective oxidation is reported. At room temperature the lasers exhibit continuous wave operation from 678 to 642 nm, with 642 nm being the shortest wavelength attained to date. In addition, these lasers possess the lowest threshold currents (660 μA) and voltages (150 mV above photon energy) reported for visible vertical-cavity lasers
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser cavity resonators; optical fabrication; oxidation; semiconductor lasers; surface emitting lasers; 150 mV; 640 to 660 nm; 660 muA; 678 to 642 nm; AlGaInP; AlGaInP vertical-cavity lasers; AlGaInP visible vertical-cavity laser diodes fabrication; continuous wave operation; lowest threshold currents; photon energy; room temperature; selectively oxidised; shortest wavelength; visible vertical-cavity lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950814
