Title :
Gain characteristics of GaN quantum wells including many body effects
Author :
Rees, P. ; Cooper, C. ; Blood, P. ; Smowton, P.M. ; Hegarty, J.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Wales Coll. of Cardiff, UK
fDate :
7/6/1995 12:00:00 AM
Abstract :
The authors have calculated the gain-current characteristics for a 70 A GaN-Al0.14Al0.86N quantum well and show that the inclusion of Coulomb enhancement increases the current at a given gain by ~50% and has an effect on the predicted laser wavelength
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; many-body problems; quantum well lasers; 70 A; Coulomb enhancement; GaN quantum wells; GaN-Al0.14Al0.86N quantum well; GaN-AlGaN; gain characteristics; gain-current characteristics; many body effects; predicted laser wavelength;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950826
