Title :
High CW output power and “wallplug” efficiency Al-free InGaAs/InGaAsP/InGaP double quantum well diode lasers
Author :
Mawst, L.J. ; Bhattacharya, A. ; Nesnidal, M. ; Lopez, J. ; Botez, D. ; Morris, J.A. ; Zory, P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
fDate :
7/6/1995 12:00:00 AM
Abstract :
2W CW output power has been obtained (driver-limited) from aluminum-free, strained-layer double quantum well (DQW) InGaAs/InGaAsP/InGaP uncoated `broad area´ diode lasers (λ=0.96 μm) grown by low pressure MOCVD. Power conversion (“wallplug”) efficiencies of 43.3% are achieved at 1.6 W CW output power. The combination of high bandgap (1.62 eV) InGaAsP confinement layers and the DQW structure provides relatively weak temperature dependence of both the threshold current and the external differential quantum efficiency
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; 0.96 micron; 2 W; 43.3 percent; CW output power; InGaAs-InGaAsP-InGaP; aluminum-free strained-layer double quantum well; broad area diode lasers; driver-limited power; external differential quantum efficiency; low pressure MOCVD; power conversion efficiencies; temperature dependence; threshold current; wallplug efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950812
