Title :
High energy CW Q-switched operation of multicontact semiconductor laser
Author :
Gavrilovic, P. ; Stelmakh, N. ; Zarrabi, J.H. ; Beyea, D.M.
Author_Institution :
Polaroid Corp., Cambridge, MA, USA
fDate :
7/6/1995 12:00:00 AM
Abstract :
Continuous-wave passive Q-switched operation of multiple-contact AlGaAs laser diodes is described. Stable pulses having an energy of 300 pJ and a duration of 40 ps were obtained from 100 μm wide devices with an 800 Å thick active layer. The pulse repetition frequency was remarkably stable, having an RF linewidth of <100 kHz
Keywords :
III-V semiconductors; Q-switching; aluminium compounds; gallium arsenide; semiconductor lasers; 300 pJ; 40 ps; AlGaAs; RF linewidth; continuous-wave passive Q-switched operation; high energy semiconductor laser; multiple-contact AlGaAs laser diodes; pulse repetition frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950790
