• DocumentCode
    808100
  • Title

    Internal optical loss measurements in 1.3 μm InGaAsP lasers

  • Author

    Shtengel, G.E. ; Ackerman, D.A.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    31
  • Issue
    14
  • fYear
    1995
  • fDate
    7/6/1995 12:00:00 AM
  • Firstpage
    1157
  • Lastpage
    1159
  • Abstract
    A highly accurate method of measuring optical loss in individual semiconductor lasers is presented and compared with other methods. Measured loss data for 1.3 μm semiconductor lasers are presented that illustrate the suitability of this technique for studying the dependence of loss on temperature and carrier density
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser variables measurement; optical loss measurement; semiconductor lasers; 1.3 micron; InGaAsP; carrier density; internal optical loss measurements; semiconductor lasers; temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950764
  • Filename
    398593
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=808100