Title :
Internal optical loss measurements in 1.3 μm InGaAsP lasers
Author :
Shtengel, G.E. ; Ackerman, D.A.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
7/6/1995 12:00:00 AM
Abstract :
A highly accurate method of measuring optical loss in individual semiconductor lasers is presented and compared with other methods. Measured loss data for 1.3 μm semiconductor lasers are presented that illustrate the suitability of this technique for studying the dependence of loss on temperature and carrier density
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser variables measurement; optical loss measurement; semiconductor lasers; 1.3 micron; InGaAsP; carrier density; internal optical loss measurements; semiconductor lasers; temperature dependence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950764
