Title :
Planar Be-doped VCSELs with high wallplug efficiencies
Author :
Zeeb, E. ; Reiner, G. ; Ries, M. ; Ebeling, K.J.
Author_Institution :
Dept. of Optoelectron., Ulm Univ., Germany
fDate :
7/6/1995 12:00:00 AM
Abstract :
The fabrication of planar, proton implanted vertical-cavity lasers (VCSELs) with low threshold voltages of 1.8 V and high wallplug efficiencies of 17.6% for top surface emission is reported. The maximum output power of 25 μm devices is 12.5 mW. Layer structures containing simple single-step graded AlGaAs-GaAs Bragg reflectors were grown by solid source molecular beam epitaxy with beryllium as p-type dopant
Keywords :
III-V semiconductors; aluminium compounds; beryllium; gallium arsenide; ion implantation; molecular beam epitaxial growth; optical fabrication; semiconductor lasers; surface emitting lasers; 1.8 V; 12.5 mW; 17.6 percent; AlGaAs-GaAs:Be; fabrication; layer structures; output power; p-type dopant; planar Be-doped VCSELs; proton implanted vertical-cavity lasers; single-step graded AlGaAs-GaAs Bragg reflectors; solid source molecular beam epitaxy; surface emission; threshold voltages; wallplug efficiencies;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950768
