DocumentCode :
808189
Title :
A 288-kb fully parallel content addressable memory using a stacked-capacitor cell structure
Author :
Yamagata, Tadato ; Mihara, Masaaki ; Hamamoto, Takeshi ; Murai, Yasumitsu ; Kobayashi, Toshifumi ; Yamada, Michihiro ; Ozaki, Hideyuki
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
Volume :
27
Issue :
12
fYear :
1992
fDate :
12/1/1992 12:00:00 AM
Firstpage :
1927
Lastpage :
1933
Abstract :
A 288-kb (8 K words×36 b) fully parallel content addressable memory (CAM) LSI using a compact dynamic CAM cell with a stacked-capacitor structure and a novel hierarchical priority encoder is described. The stacked-capacitor structure results in a very compact dynamic CAM cell (66 μm2) which is operationally stable. The novel hierarchical priority encoder reduces the circuit area and power dissipation. In addition, a new priority decision circuit is introduced. The chip size is 10.3 mm×12.0 mm using a 0.8-μm CMOS process technology. A typical search cycle time of 150 ns and a maximum power dissipation of 1.1 W have been obtained using circuit simulation. In fabricated CAM chips, the authors have verified the performance of a search operation at a 170-ns cycle and have achieved a typical read/write cycle time of 120 ns
Keywords :
CMOS integrated circuits; content-addressable storage; integrated memory circuits; large scale integration; 0.8 micron; 1.1 W; 120 ns; 150 ns; 288 kbit; CMOS process technology; LSI; circuit area; circuit simulation; compact dynamic CAM cell; fully parallel content addressable memory; hierarchical priority encoder; power dissipation; read/write cycle time; search cycle time; stacked-capacitor cell structure; Artificial intelligence; Associative memory; CADCAM; CMOS process; CMOS technology; Circuits; Computer aided manufacturing; Large scale integration; Large-scale systems; Power dissipation;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.173123
Filename :
173123
Link To Document :
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