• DocumentCode
    808189
  • Title

    A 288-kb fully parallel content addressable memory using a stacked-capacitor cell structure

  • Author

    Yamagata, Tadato ; Mihara, Masaaki ; Hamamoto, Takeshi ; Murai, Yasumitsu ; Kobayashi, Toshifumi ; Yamada, Michihiro ; Ozaki, Hideyuki

  • Author_Institution
    Mitsubishi Electr. Corp., Hyogo, Japan
  • Volume
    27
  • Issue
    12
  • fYear
    1992
  • fDate
    12/1/1992 12:00:00 AM
  • Firstpage
    1927
  • Lastpage
    1933
  • Abstract
    A 288-kb (8 K words×36 b) fully parallel content addressable memory (CAM) LSI using a compact dynamic CAM cell with a stacked-capacitor structure and a novel hierarchical priority encoder is described. The stacked-capacitor structure results in a very compact dynamic CAM cell (66 μm2) which is operationally stable. The novel hierarchical priority encoder reduces the circuit area and power dissipation. In addition, a new priority decision circuit is introduced. The chip size is 10.3 mm×12.0 mm using a 0.8-μm CMOS process technology. A typical search cycle time of 150 ns and a maximum power dissipation of 1.1 W have been obtained using circuit simulation. In fabricated CAM chips, the authors have verified the performance of a search operation at a 170-ns cycle and have achieved a typical read/write cycle time of 120 ns
  • Keywords
    CMOS integrated circuits; content-addressable storage; integrated memory circuits; large scale integration; 0.8 micron; 1.1 W; 120 ns; 150 ns; 288 kbit; CMOS process technology; LSI; circuit area; circuit simulation; compact dynamic CAM cell; fully parallel content addressable memory; hierarchical priority encoder; power dissipation; read/write cycle time; search cycle time; stacked-capacitor cell structure; Artificial intelligence; Associative memory; CADCAM; CMOS process; CMOS technology; Circuits; Computer aided manufacturing; Large scale integration; Large-scale systems; Power dissipation;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.173123
  • Filename
    173123