• DocumentCode
    808195
  • Title

    Low dark current, long wavelength metal-semiconductor-metal photodetectors

  • Author

    Wohlmuth, W.A. ; Fay, P. ; Caneau, C. ; Adesida, I.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
  • Volume
    32
  • Issue
    3
  • fYear
    1996
  • fDate
    2/1/1996 12:00:00 AM
  • Firstpage
    249
  • Lastpage
    250
  • Abstract
    Dark current densities of 0.13 and 0.44 pA/μm2 at biases of 5 and 10 V, respectively, have been obtained for InAlAs/InGaAs metal-semiconductor-metal photodetectors with a 2 μm electrode width and spacing, by placing the electrode tips and contact pads on top of an insulating layer of silicon nitride. This is the lowest known dark current density reported for InAlAs/InGaAs metal-semiconductor-metal photodetectors to date
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; InAlAs-InGaAs; Si3N4; dark current densities; insulating layer; long wavelength metal-semiconductor-metal photodetectors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960178
  • Filename
    490832
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=808195