DocumentCode :
808206
Title :
Low frequency noise in separate absorption, grading, charge and multiplication (SAGCM) avalanche photodiodes
Author :
Zhao, X. ; Deen, M.J. ; Tarof, L.E.
Author_Institution :
Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada
Volume :
32
Issue :
3
fYear :
1996
fDate :
2/1/1996 12:00:00 AM
Firstpage :
250
Lastpage :
252
Abstract :
Low frequency noise spectra of five SAGCM APDs were measured. The experimental noise current spectra were fitted with SI=AFIdx/fy+2qI dMeff. Any enhancement in shot noise was included in Meff. The AF factors were found to vary from 10 -7 to 10-5 and were related to the I-V characteristics of these APDs
Keywords :
1/f noise; avalanche photodiodes; semiconductor device noise; shot noise; I-V characteristics; SAGCM APDs; low frequency noise; noise current spectra; separate absorption grading charge and multiplication avalanche photodiodes; shot noise;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19960173
Filename :
490833
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=808206
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