DocumentCode :
808228
Title :
Spectral control in multisection AlGaAs SQW superluminescent diodes at 800 nm
Author :
Semenov, A.T. ; Shidlovski, V.R. ; Jackson, D.A. ; Willsch, R. ; Ecke, W.
Author_Institution :
Superlum Ltd., Moscow, Russia
Volume :
32
Issue :
3
fYear :
1996
fDate :
2/1/1996 12:00:00 AM
Firstpage :
255
Lastpage :
256
Abstract :
It is shown that multielectrode pumping allows a significant increase in the output power of quantum well SLDs in the broad spectrum operating regime. More than 60 nm spectral width at output power ranges from 2 to 23 mW was obtained by two-electrode pumping of the active region of AlGaAs SQW SLD. The possibility of controlling the form of the SQW SLD spectrum by multielectrode pumping and central wavelength switching of a 20 nm FWHM (Gaussian profile) over 40 nm is shown. The coherence length of the SLDs estimated using the Mandel approach is 7 mm at 2 mW output, increasing to 11 mm at 23 mW
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; semiconductor quantum wells; spectral line breadth; superluminescent diodes; 2 to 23 mW; 7 to 11 mm; 800 nm; AlGaAs; Gaussian profile; broad spectrum operating regime; central wavelength switching; multielectrode pumping; multisection SQW superluminescent diodes; single quantum well; spectral control; two-electrode pumping;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19960137
Filename :
490836
Link To Document :
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