DocumentCode :
808302
Title :
MOS device conductance modelling technique for an accurate and efficient mixed-mode simulation of CMOS circuits
Author :
Samudra, G. ; Lee, Teng Kiat
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
Volume :
32
Issue :
3
fYear :
1996
fDate :
2/1/1996 12:00:00 AM
Firstpage :
264
Lastpage :
265
Abstract :
A new technique for modelling the conductance of an MOS device for the electrical logic simulation (the Elogic algorithm) of CMOS circuits is proposed. The technique is general and applicable to any analytic device current model. The Elogic algorithm allows the representation of a logic transition using a finite number of voltage steps and calculates time for each transition between the adjacent voltage steps. The examples show that the new technique can correctly predict a complete electrical waveform with a large voltage step of 1 V to yield at least an order of magnitude computational time advantage over the circuit simulation
Keywords :
CMOS integrated circuits; MIS devices; circuit analysis computing; logic CAD; mixed analogue-digital integrated circuits; semiconductor device models; CMOS circuits; Elogic algorithm; MOS device; conductance modelling; electrical logic simulation; electrical waveform; logic transition; mixed-mode simulation; voltage step;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19960103
Filename :
490842
Link To Document :
بازگشت