• DocumentCode
    808302
  • Title

    MOS device conductance modelling technique for an accurate and efficient mixed-mode simulation of CMOS circuits

  • Author

    Samudra, G. ; Lee, Teng Kiat

  • Author_Institution
    Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
  • Volume
    32
  • Issue
    3
  • fYear
    1996
  • fDate
    2/1/1996 12:00:00 AM
  • Firstpage
    264
  • Lastpage
    265
  • Abstract
    A new technique for modelling the conductance of an MOS device for the electrical logic simulation (the Elogic algorithm) of CMOS circuits is proposed. The technique is general and applicable to any analytic device current model. The Elogic algorithm allows the representation of a logic transition using a finite number of voltage steps and calculates time for each transition between the adjacent voltage steps. The examples show that the new technique can correctly predict a complete electrical waveform with a large voltage step of 1 V to yield at least an order of magnitude computational time advantage over the circuit simulation
  • Keywords
    CMOS integrated circuits; MIS devices; circuit analysis computing; logic CAD; mixed analogue-digital integrated circuits; semiconductor device models; CMOS circuits; Elogic algorithm; MOS device; conductance modelling; electrical logic simulation; electrical waveform; logic transition; mixed-mode simulation; voltage step;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960103
  • Filename
    490842