DC operated thin film electroluminescent device

Author

Tsakonas, C. ; Thomas, C.B.

Author_Institution

Dept. of Electr. & Electron. Eng., Bradford Univ., UK

Volume

31

Issue

14

fYear

1995

fDate

7/6/1995 12:00:00 AM

Firstpage

1193

Lastpage

1195

Abstract

An improved version of a DC operated thin film electroluminescent device is proposed which relies heavily on the nature of trapping states in a p^--SiZnS:Mn heterodiode. Such a junction facilitates charge leakage from the inversion region of the silicon when films of ZnS are grown by sputtering in a sulphur-reduced environment. Alternatively. high resistivity films of ZnS are created by growth in a sulphur-enriched environment. Hence, the proposed structure is reverse biased p^--Si/ZnS (grown in Ar/O)/Y₂O₃/ZnS:Mn (grown in Ar/H₂S) and has a transparent electrode. The thin film of Y₂0₃ prevents diffusion of sulphur vacancies while facilitating electron tunnelling

Keywords

II-VI semiconductors; electrodes; electroluminescent devices; p-n heterojunctions; semiconductor growth; semiconductor thin films; sputter deposition; thin film devices; tunnelling; zinc compounds; Ar; Ar/H₂S; Ar/O/Y₂O₃/ZnS:Mn; DC operated thin film electroluminescent device; O; Si; Y₂O₃; ZnS; ZnS:Mn; charge leakage; electron tunnelling; high resistivity films; inversion region; p^--Si/ZnS; p^--SiZnS:Mn heterodiode; reverse biased; sputtering; sulphur vacancies; sulphur-enriched environment; sulphur-reduced environment; thin film; transparent electrode; trapping states;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19950767

Filename

398620