Title :
High quality oxynitride gate dielectrics prepared by reoxidation of NH3-nitrided SiO2 in N2O ambient
Author :
Han, L.K. ; Kim, J. ; Yoon, G.W. ; Yan, J. ; Kwong, D.L.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fDate :
7/6/1995 12:00:00 AM
Abstract :
The significant advantages of reoxidation of NH3-nitrided SiO2 using N2O, as opposed to O2 in a rapid thermal system have been demonstrated. MOS capacitors with N2O-reoxidised NH3-nitrided SiO 2 show improved charge-to-breakdown characteristics and suppressed interface state generation under both injection polarities compared to those with pure SiO2 and O2-reoxidised NH3-nitrided SiO2. Significant reduction of nitridation-induced traps by N2O reoxidation is mainly responsible for these improvements
Keywords :
MOS capacitors; nitridation; oxidation; rapid thermal processing; MOS capacitors; N2O; N2O ambient; NH3; NH3-nitrided SiO2; SiO2; SiON; charge-to-breakdown characteristics; injection polarities; interface state generation; oxynitride gate dielectrics; rapid thermal system; reoxidation; traps;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950806
