Title :
Silicon on insulator material technology
Author_Institution :
Dept. de Microtech., Centre d´´Etudes Nucleaires de Grenoble, France
fDate :
7/6/1995 12:00:00 AM
Abstract :
A silicon on insulator material technology based on wafer bonding is described, in which a heat treatment induces an in-depth microslicing of one of the two bonded wafers previously implanted with hydrogen. The basic phenomena, and the first physical and electrical characterisations are discussed briefly
Keywords :
heat treatment; ion implantation; silicon-on-insulator; wafer bonding; Si:H; electrical characterisation; heat treatment; hydrogen implantation; microslicing; silicon on insulator material technology; wafer bonding;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950805
