• DocumentCode
    808434
  • Title

    Study of stress-induced leakage current in scaled SiO2

  • Author

    Han, L.K. ; Wang, H.H. ; Yan, J. ; Kwong, D.L.

  • Author_Institution
    Microelectron. Res. Center, Texas Univ., Austin, TX, USA
  • Volume
    31
  • Issue
    14
  • fYear
    1995
  • fDate
    7/6/1995 12:00:00 AM
  • Firstpage
    1202
  • Lastpage
    1204
  • Abstract
    The stressed-induced leakage current (SILC) in ultrathin SiO2 with thicknesses ranging from 40 to 70 Å is studied. Results indicate that the trap creation mechanism responsible for SILC is hydrogen-related. Reduced SILC can be achieved in scaled SiO2 if the stress electric field is kept below a threshold value that increases with decreasing oxide thickness. Annealing of SiO2 in pure NO ambient is also shown to be an extremely effective approach to realising SILC reduction in ultrathin SiO2
  • Keywords
    annealing; dielectric thin films; electron traps; leakage currents; silicon compounds; NO; SiO2:H; annealing; hydrogen; scaled SiO2; stress-induced leakage current; trap creation; ultrathin oxide film;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950792
  • Filename
    398626
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=808434