Title :
Study of stress-induced leakage current in scaled SiO2
Author :
Han, L.K. ; Wang, H.H. ; Yan, J. ; Kwong, D.L.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fDate :
7/6/1995 12:00:00 AM
Abstract :
The stressed-induced leakage current (SILC) in ultrathin SiO2 with thicknesses ranging from 40 to 70 Å is studied. Results indicate that the trap creation mechanism responsible for SILC is hydrogen-related. Reduced SILC can be achieved in scaled SiO2 if the stress electric field is kept below a threshold value that increases with decreasing oxide thickness. Annealing of SiO2 in pure NO ambient is also shown to be an extremely effective approach to realising SILC reduction in ultrathin SiO2
Keywords :
annealing; dielectric thin films; electron traps; leakage currents; silicon compounds; NO; SiO2:H; annealing; hydrogen; scaled SiO2; stress-induced leakage current; trap creation; ultrathin oxide film;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950792
