Title :
3.21 ps ECL gate using InP/InGaAs DHBT technology
Author :
Ishii, K. ; Nosaka, H. ; Ida, M. ; Kurishima, K. ; Shibata, T.
Author_Institution :
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
Abstract :
A new circuit configuration for an emitter-coupled logic (ECL) gate that can reduce propagation delay time has been demonstrated. Nineteen-stage ring oscillators were fabricated using InP/InGaAs double-heterojunction bipolar transistors (DHBTs) with cutoff frequency fT and maximum oscillation frequency fmax of about 232 and 360 GHz, respectively, to evaluate the speed performance of the proposed ECL gate. The minimum propagation delay is 3.21 ps/gate. The proposed ECL gate is about 8% faster than the conventional ECL gate.
Keywords :
III-V semiconductors; bipolar logic circuits; delays; emitter-coupled logic; gallium arsenide; heterojunction bipolar transistors; indium compounds; logic gates; 232 GHz; 3.21 ps; 360 GHz; DHBT technology; ECL gate; InP-InGaAs; InP/InGaAs; cutoff frequency; emitter-coupled logic gate; maximum oscillation frequency; propagation delay; propagation delay time; ring oscillators; speed performance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030940
