Title :
Element-free Galerkin modeling of giant magnetostrictive thin films
Author :
Chen, Haiyan ; Yang, Qingxin ; Liu, Suzhen ; Yang, Wenrong ; Yan, Rongge ; Yan, Weili
Author_Institution :
Key Lab. of Electromagn. Field & Electr. Apparatus Reliability of Hebei Province, Hebei Univ. of Technol., Tianjin, China
fDate :
5/1/2005 12:00:00 AM
Abstract :
A meshless method called the element-free Galerkin method (EFGM) is introduced into the calculation of magnetostrictive thin film. With the finite element method (FEM), the distortion of the elements will decrease the precision, so EFGM is used to solve this problem. Two different magnetomechanical coupling models are proposed and a thin film cantilever is simulated with these two modeling methods. At last, the results are compared with the experiment data to illustrate the performance of EFGM and the correctness of the models.
Keywords :
Galerkin method; finite element analysis; giant magnetoresistance; magnetic thin films; magnetostriction; element-free Galerkin modeling; finite element method; giant magnetostrictive thin films; magnetomechanical coupling model; meshless method; thin film cantilever; Couplings; Finite element methods; Magnetic field induced strain; Magnetic films; Magnetic materials; Magnetic separation; Magnetostriction; Moment methods; Substrates; Transistors; Cantilever; element-free Galerkin method; magnetostrictive; thin film;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2005.845075
