A high fill factor and progressive scan PtSi Schottky-barrier IR-CCD image sensor using new wiring technology

Author

Tohyama, Shigeru ; Masubuchi, Kouichi ; Konuma, Kazuo ; Azuma, Hiromi ; Tanabe, Akihito ; Utsumi, Hiroaki ; Teranishi, Nobukazu ; Takano, Eiji ; Yamagata, Shigeki ; Hijikawa, Minoru ; Sahara, Hirokazu ; Muramatsu, Toshio ; Seki, Takahiko ; Ono, Takeshi ;

Author_Institution

Microelectron. Res. Labs., NEC Corp., Sagamihara, Japan

Volume

42

Issue

8

fYear

1995

fDate

8/1/1995 12:00:00 AM

Firstpage

1433

Lastpage

1440

Abstract

A back surface illuminated 130×130 pixel PtSi Schottky-barrier (SB) IR-CCD image sensor has been developed by using new wiring technology, referred to as CLOSE Wiring, CLOSE Wiring, designed to effectively utilize the space over the SB photodiodes, brings about flexibility in clock line designing, high fill factor, and large charge handling capability in a vertical CCD (VCCD). This image sensor uses a progressive scanned interline-scheme, and has a 64.4% fill factor in a 30 μm×30 μm pixel, a 3.9 mm×3.9 mm image area, and a 5.5 mm×5.5 mm chip size. The charge handling capability for the 3.3 μm wide VCCD achieves 9.8×10⁵ electrons, The noise equivalent temperature difference obtained was 0.099 K for operation at 120 frames/sec with a 50 mm f/1.3 lens.

Keywords

CCD image sensors; Schottky diodes; infrared imaging; integrated circuit metallisation; integrated circuit noise; platinum compounds; 130 pixel; 16900 pixel; CLOSE Wiring; IR CCD image sensor; PtSi; PtSi Schottky-barrier; back surface illumination; charge handling capability; clock line design; high fill factor; photodiodes; progressive scanned interline-scheme; progressive scanning; vertical CCD; wiring technology; Charge coupled devices; Clocks; Electrons; Image sensors; Photodiodes; Pixel; Space charge; Space technology; Temperature; Wiring;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.398651

Filename

398651