Title :
Linewidth enhancement factor and near-field pattern in tunnel injection In0.4Ga0.6As self-assembled quantum dot lasers
Author :
Fathpour, S. ; Bhattacharya, P. ; Pradhan, S. ; Ghosh, S.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
Measurements of ultra-low linewidth enhancement factor in ridge-waveguide tunnel injection In0.4Ga0.6As/GaAs self-assembled quantum dot lasers have been made and the results compared with similar quantum well lasers. Values of α∼3.8 were measured in the quantum well lasers, and α was ≤0.7 in the quantum dot lasers. The consequent suppression of filamentation in the quantum dot devices has also been observed.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; ridge waveguides; self-assembly; spectral line breadth; waveguide lasers; In0.4Ga0.6As-GaAs; filamentation suppression; linewidth enhancement factor; near-field pattern; ridge waveguide; self-assembled quantum dot lasers; semiconductor lasers; tunnel injection; ultra-low linewidth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030944
