Title :
Low-threshold CW GaInNAsSb/GaAs laser at 1.49 μm
Author :
Bank, S.R. ; Wistey, M.A. ; Yuen, H.B. ; Goddard, L.L. ; Ha, W. ; Harris, J.S., Jr.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
Abstract :
Low-threshold room temperature continuous wave 1.49 μm GaInNAsSb lasers are presented. Room temperature threshold current density of 1.1 kA/cm2 was observed with a high external quantum efficiency of 40% and maximum output power of 30 mW from both facets.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; semiconductor lasers; 1.49 micron; 30 mW; 40 percent; GaInNAsSb-GaAs; GaInNAsSb/GaAs; external quantum efficiency; low-threshold continuous wave lasers; output power; room temperature lasers; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030928
