Title :
A new integrated pixel detector for high energy physics
Author :
Snoeys, W. ; Plummer, J. ; Parker, S. ; Kenney, C.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
fDate :
10/1/1992 12:00:00 AM
Abstract :
The authors have fabricated integrated pixel devices which have the high-resistivity, signal-charge collecting volume and the readout circuitry in a single piece of silicon. The device and its circuitry are described. They present noise measurements illustrating the excellent signal to single-channel noise performance of this device of about 150 to 1 for a minimum ionizing particle, which is an order to magnitude better than silicon strip detectors currently used. A setup was made for packaged devices. Gamma irradiation measurement results obtained with this setup illustrate the high signal to noise performance, and good uniformity in sensitivity over the different pixels
Keywords :
elemental semiconductors; gamma-ray detection and measurement; semiconductor counters; silicon; Si; gamma irradiation; high energy physics; high-resistivity; integrated pixel detector; minimum ionizing particle; noise measurements; noise performance; readout circuitry; sensitivity; signal to single-channel noise performance; signal-charge collecting volume; strip detectors; Circuits; Electrodes; Infrared detectors; Lighting; Noise measurement; Packaging; Radiation detectors; Sensor arrays; Silicon; Spatial resolution;
Journal_Title :
Nuclear Science, IEEE Transactions on
