32 GHz MMIC distributed amplifier based on n-channel SiGe MODFETs

Author

Abele, P. ; Zeuner, M. ; Kallfass, I. ; Müller, J. ; Hiwilepo, H. Laban ; Hackbarth, T. ; Chrastina, D. ; Von Känel, H. ; Konig, U. ; Schumacher, H.

Author_Institution

Dept. of Electron Devices & Circuits, Univ. of Ulm, Germany

Volume

39

Issue

20

fYear

2003

Firstpage

1448

Lastpage

1449

Abstract

For the first time the fabrication of a distributed amplifier based on n-type Si/SiGe-MODFETs is presented. The realised amplifier consists of six identical stages and has a gain of 5.5 dB. The bandwidth of this amplifier is 32 GHz. The gain ripple up to this frequency is ±0.8 dB. The return losses at the input and output are better than 10 dB. Using a coplanar waveguide layout for the amplifier no via-holes and backside processing is needed. The MMIC has a size of 0.9×3.2 mm².

Keywords

Ge-Si alloys; HEMT integrated circuits; MMIC amplifiers; coplanar waveguides; distributed amplifiers; elemental semiconductors; field effect MIMIC; integrated circuit layout; millimetre wave amplifiers; semiconductor materials; silicon; wideband amplifiers; 0.9 mm; 10 dB; 3.2 mm; 32 GHz; 5.5 dB; CPW layout; MMIC distributed amplifier; Si; Si-SiGe; bandwidth; coplanar waveguide layout; gain ripple; high resistivity Si substrate; multistage amplifier; n-channel Si/SiGe MODFET; return loss;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20030953

Filename

1238595